Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2679969
Reference12 articles.
1. Characteristics of Ultraviolet Laser Diodes Composed of Quaternary AlxInyGa(1-x-y)N
2. Study of GaN-based Laser Diodes in Near Ultraviolet Region
3. 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
4. 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
5. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
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