Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3039167
Reference37 articles.
1. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows
2. Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia
3. Structural Change during Annealing of Amorphous Indium-Tin Oxide Films Deposited by Sputtering withH2OAddition
4. Amorphous ITO thin films prepared by DC sputtering for electrochromic applications
5. Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy
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