Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN-Reference-Cited by-同舟云学术

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Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN

Published:2018-07-16 Issue:3 Volume:113 Page:032106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Courtade E.¹,Han B.¹,Nakhaie S.²,Robert C.¹,Marie X.¹,Renucci P.¹,Taniguchi T.³,Watanabe K.³^ORCID,Geelhaar L.²,Lopes J. M. J.²,Urbaszek B.¹^ORCID

Affiliation:

1. Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, France

2. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany

3. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5033554

Reference59 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Colloquium : Excitons in atomically thin transition metal dichalcogenides

4. Tightly Bound Excitons in MonolayerWSe2

5. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

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