High resolution photoluminescence spectroscopy of donors in undoped and In-doped ZnO grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3652854
Reference15 articles.
1. A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)
2. Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition
3. Bound exciton luminescence of Ar- and Al-implanted ZnO
4. Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques
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