Mechanisms of InAs/GaAs quantum dot formation during annealing of In islands-Reference-Cited by-同舟云学术

Mechanisms of InAs/GaAs quantum dot formation during annealing of In islands

Published:2013-09-23 Issue:13 Volume:103 Page:132104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang S.,Kim S. J.,Levy R.,Pan X. Q.,Goldman R. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4822052

Reference22 articles.

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2. Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell

3. Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices

4. Evidence of two-photon absorption in strain-free quantum dot GaAs/AlGaAs solar cells

5. 1.3 μm room-temperature GaAs-based quantum-dot laser

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