Vacancy formation in GaAs under different equilibrium conditions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2084330
Reference20 articles.
1. A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide
2. Point defects and diffusion in thin films of GaAs
3. Positron Annihilation in Semiconductors
4. Charged native point defects in GaAs and other III–V compounds
5. Evidence of two kinds of acceptors in undoped semi-insulating GaAs: Positron trapping at gallium vacancies and negative ions
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