Rapid thermal processing of WSixcontacts to InP in low‐pressure N2:H2and tertiarybutylphosphine ambients
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347539
Reference29 articles.
1. Refractory metal silicides for self-aligned gate modulation doped n+-(Al,Ga)As/GaAs field-effect transistor integrated circuits
2. A GaAs 1K static RAM using tungsten silicide gate self-aligned technology
3. WSix refractory metallization for GaAs metal–semiconductor field-effect transistors
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Use of Ti in ohmic metal contacts to p-GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
2. Physical and Chemical Deposition of Metals as Ohmic Contacts to InP and Related Materials;Handbook of Compound Semiconductors;1995
3. Rapid thermal low-pressure metal-organic chemical vapor deposition (RT-LPMOCVD) of semiconductor, dielectric and metal film onto InP and related materials;Materials Science and Engineering: R: Reports;1994-10
4. Rapid thermal low-pressure metalorganic chemical vapour deposition of local diffused W(Zn) contacts;Semiconductor Science and Technology;1993-07-01
5. Single wafer integrated processes by RT-LPMOCVD modules — application in the manufacturing of InP-based laser devices;Materials Chemistry and Physics;1992-12
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