Carrier transfer and redistribution dynamics in vertically aligned stacked In0.5Ga0.5As quantum dots with different GaAs spacer thicknesses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3272712
Reference21 articles.
1. High-Frequency Modulation Characteristics of 1.3->tex<$muhboxm$>/tex<InGaAs Quantum Dot Lasers
2. Room temperature slow and fast light in quantum-dot semiconductor optical amplifiers
3. High-Performance Quantum-Dot Superluminescent Diodes
4. Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer
5. Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stacking of InAs QDs with Different Spacer Layer Thickness on GaAs Substrate by Molecular Beam Epitaxy;Advanced Science Letters;2018-08-01
2. Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots;Journal of Applied Physics;2012-06-15
3. Growth and characterization of low density droplet GaAs quantum dots for single photon sources;Quantum Sensing and Nanophotonic Devices VIII;2011-01-22
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