On-chip unstable resonator cavity GaSb-based quantum well lasers
Author:
Affiliation:
1. Air Force Research Laboratory, Directed Energy Directorate, AFRL/RDLTD, Albuquerque, New Mexico 87117, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4980028
Reference13 articles.
1. Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
2. Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm
3. Three stage cascade diode lasers generating 500 mW near 3.2 μm
4. Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate
5. Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier
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