Ion‐induced epitaxial growth of chemical vapor deposited Si layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99355
Reference10 articles.
1. Kinetics and Mechanisms of Solid Phase Epitaxy and Competitive Processes in Silicon
2. Solid‐phase epitaxy of implanted silicon by cw Ar ion laser irradiation
3. Solid‐state epitaxial growth of deposited Si films
4. Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements
5. Effect of structure and impurities on the epitaxial regrowth of amorphous silicon
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2. Epitaxial growth of a deposited amorphous Si layer formed on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization combined with ion beam mixing;Japanese Journal of Applied Physics;2019-02-04
3. Fundamentals for the formation and structure control of thin films;Handbook of Thin Films;2002
4. Epitaxial crystallization during 600 °C furnace annealing of amorphous Si layer deposited by low-pressure chemical-vapor-deposition and irradiated with 1-MeV Xe ions;Journal of Applied Physics;1997-12
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