Characterization of defects in (ZnMg)Se compounds by positron annihilation and photoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373821
Reference24 articles.
1. Composition dependence of the unit cell dimensions and the energy gap in Zn1-xMgxSe crystals
2. Photoluminescence properties of MgxZn1−xSe single crystals
3. Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
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1. Numerical Study of Zn0.66Mg0.34Se/Zn0.74Cd0.26Se Bragg Reflector: Normal and Oblique Incidence;Transactions on Electrical and Electronic Materials;2019-09-23
2. Defect-induced ultimately fast volume phonon-polaritons in the wurtzite Zn0.74Mg0.26Se mixed crystal;Scientific Reports;2019-05-24
3. Experimental Observation of Vacancy-assisted Martensitic Transformation Shift in Ni-Fe-Ga Alloys;Physical Review Letters;2019-04-23
4. Observation of a charge delocalization from Se vacancies inBi2Se3: A positron annihilation study of native defects;Physical Review B;2016-07-27
5. Optical characterization of Zn0.35Cd0.44Mg0.21Se crystalline alloy by polarization-dependent contactless electroreflectance measurements;physica status solidi (c);2012-05-08
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