p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing-Reference-Cited by-同舟云学术

p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

Published:2020-08-28 Issue:8 Volume:128 Page:085701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Meyers V.¹^ORCID,Rocco E.¹^ORCID,Anderson T. J.²,Gallagher J. C.²,Ebrish M. A.²,Jones K.³,Derenge M.³^ORCID,Shevelev M.⁴^ORCID,Sklyar V.⁴^ORCID,Hogan K.¹^ORCID,McEwen B.¹,Shahedipour-Sandvik F.¹

Affiliation:

1. College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12210, USA

2. Naval Research Laboratory, Washington, DC 20375, USA

3. Army Research Laboratory, Adelphi, Maryland 20783, USA

4. Gyrotron Technology Inc., Bensalem, Pennsylvania 19020, USA

Funder

Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0016358

Reference32 articles.

1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

2. Planar Nearly Ideal Edge-Termination Technique for GaN Devices

3. Mg Incorporation Efficiency in Pulsed MOCVD of N-Polar GaN:Mg

4. Materials and processing issues in vertical GaN power electronics

5. Counter-Doped Multizone Junction Termination Extension Structures in Vertical GaN Diodes

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