The effect of excess gallium vacancies in low‐temperature GaAs/AlAs/GaAs:Si heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362742
Reference14 articles.
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5. Response to ‘‘Comment on ‘Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs’ ’’ [Appl. Phys. Lett. 67, 1331 (1995)]
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