Net electron-phonon scattering rates in InN/GaN multiple quantum wells: The effects of an energy dependent acoustic deformation potential
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893158
Reference32 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
4. Non-ideal energy selective contacts and their effect on the performance of a hot carrier solar cell with an indium nitride absorber
5. Resonant Tunnelling and Superlattice Devices: Physics and Circuits
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