Diode-like electrical characteristics of SiGe wrinkled heterostructure operating under both forward and reverse bias-Reference-Cited by-同舟云学术

Diode-like electrical characteristics of SiGe wrinkled heterostructure operating under both forward and reverse bias

Published:2016-02-08 Issue:6 Volume:108 Page:063106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li H.¹,Chen T. P.¹^ORCID,Chang C.¹,Cheng H. H.¹,Chang Guo-En²^ORCID,Hung K. M.³

Affiliation:

1. Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan

2. Department of Mechanical Engineering and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chia-Yi County 62102, Taiwan

3. Department of Electronics Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4941759

Reference30 articles.

1. Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers

2. Lattice Parameter and Density in Germanium-Silicon Alloys1

3. Quantum Wells, Wires and Dots

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