Current-induced perpendicular magnetization switching without external magnetic field in gate-induced asymmetric structure
Author:
Affiliation:
1. Department of Applied Physics, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
2. SANKEN, Osaka University, Ibaraki, Osaka 567-0047, Japan
3. Center for Spintronics Research Network, Osaka University, Toyonaka, Osaka 560-8531, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0070987
Reference39 articles.
1. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
2. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
3. Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect
4. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
5. Ultrafast magnetization switching by spin-orbit torques
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3. Current-induced perpendicular effective magnetic field in magnetic heterostructures;Applied Physics Reviews;2022-12
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