Change in bonding properties of amorphous hydrogenated silicon‐carbide layers prepared with different gases as carbon sources
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107999
Reference7 articles.
1. Improvement of the photoelectric properties of amorphous SiCx:H by using disilylmethane as a feeding gas
2. Comparison of a-Si1-xCx:H Layers Based on Methane, Di-, Tri- and Tetrasilylmethane as Feedstocks
3. Physics of low density-of-states a-Si1−xCx films
4. Selective low-power plasma decomposition of silane-methane mixtures for the preparation of methylated amorphous silicon
5. Preparation of highly photosensitive hydrogenated amorphous Si‐C alloys from a glow‐discharge plasma
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1. Review: Progress in solar cells from hydrogenated amorphous silicon;Renewable and Sustainable Energy Reviews;2017-09
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3. Dependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate;Journal of Non-Crystalline Solids;2011-02
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