Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal-Reference-Cited by-同舟云学术

Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal

Published:2008-09-29 Issue:13 Volume:93 Page:131906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sritirawisarn N.,van Otten F. W. M.,Eijkemans T. J.,Nötzel R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2993178

Reference15 articles.

1. Self-organized anisotropic strain engineering: a new concept for quantum dot ordering

2. Surface migration induced self‐aligned InAs islands grown by molecular beam epitaxy

3. Alignment of InP Stranski–Krastanow dots by growth on patterned GaAs/GaInP surfaces

4. Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy

5. Growth of three-dimensional quantum dot crystals on patterned GaAs (001) substrates

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