High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air
Author:
Affiliation:
1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Funder
National Key Technologies R&D Program of China
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5007131
Reference28 articles.
1. Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO
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4. Semiconductor ultraviolet detectors
5. 3D-branched hierarchical 3C-SiC/ZnO heterostructures for high-performance photodetectors
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