Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4823854
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1. High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics
2. Resistive switching in transition metal oxides
3. Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy
4. A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks
5. Grain boundary-driven leakage path formation in HfO2 dielectrics
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