Real time spectroellipsometry characterization of optical gap profiles in compositionally‐graded semiconductor structures: Applications to bandgap engineering in amorphous silicon‐carbon alloy solar cells-Reference-Cited by-同舟云学术

Real time spectroellipsometry characterization of optical gap profiles in compositionally‐graded semiconductor structures: Applications to bandgap engineering in amorphous silicon‐carbon alloy solar cells

Published:1996-08-15 Issue:4 Volume:80 Page:2420-2429
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim Sangbo,Burnham J. S.,Koh Joohyun,Jiao Lihong,Wronski C. R.,Collins R. W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.363077

Reference25 articles.

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2. In Situ Ellipsometry in Microelectronics

3. Optical properties of thin films

4. Real time spectroscopic ellipsometry study of hydrogenated amorphous silicon p‐i‐n solar cells: Characterization of microstructural evolution and optical gaps

5. Assessment byinsituellipsometry of composition profiles of Ga1−xAlxAs‐GaAs heterostructures x

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