0.52 eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology-Reference-Cited by-同舟云学术

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0.52 eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Published:2004 Issue: Volume: Page:
ISSN:0094-243X
Container-title:AIP Conference Proceedings
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Author:

Dashiell M. W.

Publisher

AIP

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical mechanism of Zn and Te doping process of In0.145Ga0.855As0.108Sb0.892 quaternary alloys;Materials Science in Semiconductor Processing;2024-04

2. Optimum semiconductor bandgaps in single junction and multijunction thermophotovoltaic converters;Solar Energy Materials and Solar Cells;2015-03

3. Radiant thermal conversion in 0.53 eV GaInAsSb thermophotovoltaic diode;Renewable Energy;2015-03

4. Effect of material parameters on the open-circuit voltage in a GaInAsSb thermophotovoltaic cell;Infrared Physics & Technology;2010-01

5. Quaternary InGaAsSb Thermophotovoltaic Diodes;IEEE Transactions on Electron Devices;2006-12

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