Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3100212
Reference46 articles.
1. In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)
2. Single electron tunneling of nanoscale TiSi2 islands on Si
3. Schottky-barrier inhomogeneity at epitaxialNiSi2interfaces on Si(100)
4. Explanation of the linear correlation between barrier heights and ideality factors of real metal-semiconductor contacts by laterally nonuniform Schottky barriers
5. Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)
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