Thermally activated carrier transfer processes in InGaN∕GaN multi-quantum-well light-emitting devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1978967
Reference11 articles.
1. Theory of spontaneous-emission lifetime of Wannier excitons in mesoscopic semiconductor quantum disks
2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
3. Spatially resolved cathodoluminescence spectra of InGaN quantum wells
4. Origin of Luminescence from InGaN Diodes
5. Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes
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1. Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure;Scientific Reports;2015-09-04
2. Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes;Advances in Condensed Matter Physics;2014
3. Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence;Applied Physics Letters;2012-04-09
4. Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method;Journal of Crystal Growth;2011-01
5. Temperature-dependent droop of electroluminescence efficiency in blue (In,Ga)N quantum-well diodes;physica status solidi (c);2009-01-14
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