Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3601469
Reference15 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
3. Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers
4. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures
5. Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure
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