X‐ray standing wave study of a Si‐adsorbed GaAs(001) surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.115988
Reference17 articles.
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A first-principles surface phase diagram study for Si-adsorption processes on GaAs(111)A surfaces;Surface Science;2010-01
2. An ab initio-based approach to adsorption–desorption behavior of Si adatoms on GaAs(111)A–(2×2) surfaces;Applied Surface Science;2009-11
3. Surface structure determination using x-ray standing waves;Reports on Progress in Physics;2005-03-09
4. Theoretical Investigation of the Adsorption Behavior of Si Adatoms on GaAs(001)-(2× 4) Surfaces;Japanese Journal of Applied Physics;1998-10-15
5. An ultrahigh-vacuum goniometer for in situ soft X-ray standing-wave analysis of semiconductor surfaces;Journal of Synchrotron Radiation;1998-05-01
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