Thickness dependence of parallel and perpendicular anisotropic resistivity in Ta/NiFe/IrMn/Ta multilayer studied by anisotropic magnetoresistance and planar Hall effect-Reference-Cited by-同舟云学术

Thickness dependence of parallel and perpendicular anisotropic resistivity in Ta/NiFe/IrMn/Ta multilayer studied by anisotropic magnetoresistance and planar Hall effect

Published:2007-03 Issue:5 Volume:101 Page:053702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Thanh N. T.,Tu L. T.,Ha N. D.,Kim C. O.,Kim CheolGi,Shin K. H.,Parvatheeswara Rao B.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2435816

Reference17 articles.

1. Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films

2. Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

3. Planar Hall effect in NiFe/NiMn bilayers

4. Magnetic sensors for nanotesla detection using planar Hall effect

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