Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3596467
Reference16 articles.
1. Carrier thermalization within a disordered ensemble of self-assembled quantum dots
2. Spectroscopy of the electronic states in InAs quantum dots grown onInxAl1−xAs/InP(001)
3. Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)
4. Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices
5. Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
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1. Enhanced circular photogalvanic effect in HgTe quantum wells in the heavily inverted regime;Physical Review B;2017-01-25
2. Interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy -A review;physica status solidi (b);2014-03-21
3. Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells;Journal of Applied Physics;2014-02-28
4. Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique;Applied Physics Letters;2013-06-10
5. Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As two-dimensional electron system;Applied Physics Letters;2013-05-27
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