Basics mechanisms for enhanced prompt charge collection in a n+p junction following single charged particle interaction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368441
Reference15 articles.
1. A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices
2. Charge Funneling in N- and P-Type Si Substrates
3. Alpha-, boron-, silicon- and iron-ion-induced current transients in low-capacitance silicon and GaAs diodes
4. Device simulation of charge collection and single-event upset
5. Comparison of experimental charge collection waveforms with PISCES calculations
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion and electron track-structure and its effects in silicon: model and calculations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-01
2. New Monte Carlo calculations of charged particle track-structure in silicon;IEEE Transactions on Nuclear Science;2004-10
3. Temperature dependence of single-event transient current induced by heavy-ion microbeam on p/sup +//n/n/sup +/ epilayer junctions;IEEE Transactions on Nuclear Science;2004-10
4. Ion-track structure and its effects in small size volumes of silicon;IEEE Transactions on Nuclear Science;2002-12
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