Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961522
Reference36 articles.
1. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review
2. Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
3. Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection
4. Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V
5. Nanometre-scale electronics with III–V compound semiconductors
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