Preferential diffusion and orientation effects of Schottky barrier GaAs field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94688
Reference9 articles.
1. Orientation effect on planar GaAs Schottky barrier field effect transistors
2. Orientation effect of self‐aligned source/drain planar GaAs Schottky barrier field‐effect transistors
3. GaAs LSI-directed MESFET's with self-aligned implantation for n+-layer technology (SAINT)
4. Asymmetric Cracking in III–V Compounds
5. Anisotropic bending during epitaxial growth of mixed crystals on GaAs substrate
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Surface‐emitting lasers with optical cavity along the [111] direction;Applied Physics Letters;1992-02-10
2. Chapter 3 Device Fabrication Process Technology;Semiconductors and Semimetals;1990
3. Iii–V Semiconductor Devices;Materials Processing: Theory and Practices;1989
4. Making GaAs integrated circuits;Proceedings of the IEEE;1988-07
5. Investigation of orientation effect on contact resistance in selectively doped AlGaAs/GaAs heterostructures;Applied Physics Letters;1986-11-10
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