Liquid-mediated crystallization of amorphous GeSn under electron beam irradiation-Reference-Cited by-同舟云学术

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Liquid-mediated crystallization of amorphous GeSn under electron beam irradiation

Published:2020-05-29 Issue:20 Volume:127 Page:205304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Inenaga Kohei¹,Motomura Ryo¹,Ishimaru Manabu¹^ORCID,Nakamura Ryusuke²^ORCID,Yasuda Hidehiro³

Affiliation:

1. Department of Materials Science and Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka 804-8550, Japan

2. Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan

3. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0006416

Reference39 articles.

1. In situ x-ray diffraction study of metal induced crystallization of amorphous germanium

2. Growth and applications of GeSn-related group-IV semiconductor materials

3. Constitution of Binary Alloys

4. Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer

5. Large grain growth of Ge-rich Ge1−xSnx(x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

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