A reverse bias, tip-insulator-semiconductor tunnel diode model accounting for the delineation of a p/p+ junction using scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373094
Reference27 articles.
1. 1.5 nm direct-tunneling gate oxide Si MOSFET's
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1. Photoassisted Scanning Tunneling Spectroscopy Study on the Local Spot Strucutres in Thin HfO2Film on Si;Applied Physics Express;2008-04-18
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