Hydrogen effusion from epitaxial ZnSe layers grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122203
Reference12 articles.
1. Comparison of hydrogen passivation of ZnSe:N using gas source and conventional molecular beam epitaxy
2. Origin of the low doping efficiency of nitrogen acceptors in ZnSe grown by metalorganic chemical vapor deposition
3. Effects of annealing atmosphere and temperature on acceptor activation in ZnSe:N grown by photoassisted MOVPE
4. Hydrogen in Compound Semiconductors
5. Incorporation of hydrogen in nitrogen and arsenic doped ZnSe epitaxial layers grown by organometallic vapor phase epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures;Progress in Crystal Growth and Characterization of Materials;2002-01
2. Nitrogen doping of MOVPE-grown ZnSe by hydrazine derivatives;Journal of Crystal Growth;2000-02
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