Band structure, effective mass, and carrier mobility of few-layer h-AlN under layer and strain engineering-Reference-Cited by-同舟云学术

Band structure, effective mass, and carrier mobility of few-layer h-AlN under layer and strain engineering

Published:2020-02-01 Issue:2 Volume:8 Page:021107
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Cai Yao¹^ORCID,Liu Yan¹,Xie Ying¹,Zou Yang¹^ORCID,Gao Chao¹,Zhao Yan¹,Liu Sheng¹,Xu Hongxing²,Shi Jian³,Guo Shishang²,Sun Chengliang¹^ORCID

Affiliation:

1. The Institute of Technological Sciences, Wuhan University, Wuhan 430072, People’s Republic of China

2. Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People’s Republic of China

3. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

Funder

Hubei Provincial Major Program of Technological Innovation

China Scholarship Council

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5139664

Reference44 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. GaN/AlGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode

3. Toward CMOS like devices from two-dimensional channel materials

4. Hexagonal AlN: Dimensional-crossover-driven band-gap transition

5. Mechanical stabilities and properties of graphene-like aluminum nitride predicted from first-principles calculations

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