Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films-Reference-Cited by-同舟云学术

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

Published:2016-04-01 Issue:13 Volume:119 Page:134101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Katayama Kiliha¹^ORCID,Shimizu Takao²,Sakata Osami³,Shiraishi Takahisa⁴,Nakamura Shogo⁴,Kiguchi Takanori⁴,Akama Akihiro⁴,Konno Toyohiko J.⁴,Uchida Hiroshi⁵^ORCID,Funakubo Hiroshi¹²

Affiliation:

1. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

2. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

3. Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan

4. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

5. Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference19 articles.

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5. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

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