Deep-defect-induced quenching effects in semi-insulating GaN layers detected by photoelectrical spectroscopic techniques
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1579556
Reference14 articles.
1. GaN: Processing, defects, and devices
2. Optical quenching of photoconductivity in GaN photoconductors
3. Optical quenching of the photoconductivity in n-type GaN
4. Observation of optically-active metastable defects in undoped GaN epilayers
5. Optical metastability in undoped GaN grown on Ga-rich GaN buffer layers
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1. Characterization of defects in undoped non c-plane and high resistance GaN layers dominated by stacking faults;Physica B: Condensed Matter;2009-12
2. Deep centers in semi-insulating Fe-doped native GaN substrates grown by hydride vapour phase epitaxy;physica status solidi (c);2008-05
3. Thermally stimulated current studies on neutron irradiation induced defects in GaN;Applied Physics Letters;2006-03-27
4. Characterization of deep defects responsible for the quenching behavior in undoped GaN layers;Physical Review B;2005-03-30
5. Suppressing of optical quenching of deep defect-to-band transitions in AlGaN and GaN/AlGaN heterostructures;Applied Physics Letters;2004-05-03
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