Catastrophic degradation level of visible and infrared GaAlAs lasers

Author:

Wakao Kiyohide,Takagi Nobuyuki,Shima Katsuhito,Hanamitsu Kiyoshi,Hori Ken‐ichi,Takusagawa Masahito

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Laser diode current controller with a high level of protection against electromagnetic interference;Review of Scientific Instruments;2003-08

2. Instrumentation for narrow-linewidth semiconductor laser;11th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics;1999-07-14

3. Optical strength of semiconductor laser materials;Progress in Quantum Electronics;1996-01

4. High speed 1.3 mu m InGaAsP Fabry-Perot lasers for digital and analog applications;IEEE Journal of Quantum Electronics;1993-06

5. High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique;IEEE Journal of Quantum Electronics;1990-05

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