Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics-Reference-Cited by-同舟云学术

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

Published:2004-02-23 Issue:8 Volume:84 Page:1395-1397
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Saito Shin-ichi,Torii Kazuyoshi,Shimamoto Yasuhiro,Tsujikawa Shimpei,Hamamura Hirotaka,Tonomura Osamu,Mine Toshiyuki,Hisamoto Digh,Onai Takahiro,Yugami Jiro,Hiratani Masahiko,Kimura Shin’ichiro

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1650551

Reference12 articles.

1. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

2. Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

3. Improved theory for remote-charge-scattering-limited mobility in metal–oxide–semiconductor transistors

4. Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures

5. Scattering of silicon inversion layer electrons by metal/oxide interface roughness

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