Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates

Published:2019-12-21 Issue:23 Volume:126 Page:235704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kumar Ashutosh¹²^ORCID,Uzuhashi Jun¹²,Ohkubo Tadakatsu¹²,Tanaka Ryo³,Takashima Shinya³^ORCID,Edo Masaharu³,Hono Kazuhiro²^ORCID

Affiliation:

1. Center for GaN Characterization and Analysis, National Institute for Materials Science, Tsukuba 305-0047, Japan

2. Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science, Tsukuba 305-0047, Japan

3. Advanced Technology Laboratory, Fuji Electric Co., Ltd., Hino, Tokyo 191-8502, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5132345

Reference42 articles.

1. Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations

2. Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

3. Origin of Blue Luminescence in Mg -Doped GaN

4. Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

5. Self-compensation due to point defects in Mg-doped GaN

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer;Journal of Applied Physics;2024-08-01

2. Microscopic correlation of doping distribution and luminescence in a nitride laser junction by Photonic Atom Probe;Physical Review Materials;2024-07-18

3. Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN;physica status solidi (RRL) – Rapid Research Letters;2024-04-22

4. Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation;Journal of Applied Physics;2024-01-11

5. Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing;Journal of Applied Physics;2023-07-18

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3