Studies of hydrogen ion beam cleaning of silicon dioxide from silicon usinginsituspectroscopic ellipsometry and x‐ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104596
Reference23 articles.
1. Tin‐doping effects in GaAs films grown by molecular beam epitaxy
2. Carrier compensation at interfaces formed by molecular beam epitaxy
3. Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
4. Low-Temperature Surface Cleaning of Si and Successive Plasma-Assisted Epitaxial Growth of GaAs
5. In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition
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1. Real-Time Ellipsometry at High and Low Temperatures;ACS Omega;2023-01-17
2. Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry;Materials Science in Semiconductor Processing;2022-12
3. Evaluation of Damage Layer in an Organic Film with Irradiation of Energetic Ion Beams;Japanese Journal of Applied Physics;2010-03-23
4. Etching of Silicon Native Oxide Using Ultraslow Multicharged Ar[sup q+] Ions;Journal of The Electrochemical Society;2004
5. Oxidation of rf plasma: hydrogenated crystalline Si;Solid-State Electronics;1999-06
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