Surface step bunching and crystal defects in InAlAs films grown by molecular beam epitaxy on (111)B InP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120229
Reference17 articles.
1. Strain-generated electric fields in [111] growth axis strained-layer superlattices
2. Strain‐induced effects in (111)‐oriented InAsP/InP, InGaAs/InP, and InGaAs/InAlAs quantum wells on InP substrates
3. Piezoelectric field effects in InGaAs (111)B quantum wells
4. Photoluminescence of piezoelectric strained InGaAsGaAs multi-quantum well p-i-n structures
5. Piezoelectric effect in quantum wells grown on (211)B GaAs
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1. Atomically Smooth Defect-Free III-As Heterostructures on InP(111) Substrate for Next-Generation Electronic Devices;ACS Applied Nano Materials;2022-11-15
2. On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2019-05
3. Strain relaxation behaviour in InxGa1-xAs quantum wells on misorientated GaAs (111)B substrates;Microscopy of Semiconducting Materials 2001;2018-01-18
4. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation;Journal of Applied Physics;2007-08
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