Morphological instability and Si diffusion in nanoscale cobalt silicide films formed on heavily phosphorus doped polycrystalline silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110804
Reference12 articles.
1. Incorporation of metal silicides and refractory metals in VLSI technology
2. Agglomeration of Cobalt Silicide Films
3. Partial agglomeration during Co silicide film formation
4. Stability of Nanoscale Cobalt Silicide Film Formation on Polysilicon
5. Recrystallization and grain growth phenomena in polycrystalline Si/CoSi2thin‐film couples
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2. Grain-Boundary Grooving and Agglomeration of Alloy Thin Films with a Slow-Diffusing Species;Physical Review Letters;2007-02-23
3. Formation of CoSi[sub 2] on Various Polycrystalline Silicon Structures and Its Effects on Thermal Stability;Journal of The Electrochemical Society;2000
4. Effects of Ti-Capping on Formation and Stability of Co Silicide. I. Solid Phase Reaction of Ti to Co/Si System;Journal of The Electrochemical Society;2000
5. Morphological instability ofδ-ferrite/γ-austenite interphase boundary in low carbon steels;Acta Materialia;1999-03
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