Al composition dependent properties of quaternary AlInGaN Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2206609
Reference48 articles.
1. Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates
2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
3. Lattice and energy band engineering in AlInGaN/GaN heterostructures
4. Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures
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1. Impact of In and Ga Fractions in Lattice-Matched InAlGaN Barrier Layer on Performance of InAlGaN/GaN MISHEMT;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22
2. Development of magnetic sensor technologies for point-of-care testing: Fundamentals, methodologies and applications;Sensors and Actuators A: Physical;2020-09
3. Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si;Journal of Applied Physics;2019-06-14
4. Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures;Semiconductor Science and Technology;2019-04-10
5. Al composition and AlxInyGazN layer thickness dependent new analytical model for I-V characteristics of AlxInyGazN/GaN HEMTs;Materials Today: Proceedings;2019
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