Spatial phase separation of GaN selectively grown on a nanoscale faceted Si surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1687456
Reference12 articles.
1. Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates
2. Selective Area Growth of GaN on Si Substrate Using SiO 2 Mask by Metalorganic Vapor Phase Epitaxy
3. Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE
4. Enhanced photoluminescence from GaN grown by lateral confined epitaxy
5. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
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1. MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1);Journal of Crystal Growth;2023-06
2. Pyramidal shape four V-grooved silicon substrate for enhancing cubic phase gallium nitride growth;Applied Physics Letters;2022-03-14
3. Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics;Progress in Quantum Electronics;2021-05
4. Elastic Variation of Quasi-One-Dimensional Cubic-Phase GaN at Nanoscale;Crystal Growth & Design;2019-08-19
5. Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures;Quantum Electronics;2019-06-01
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