Sidewall passivation layer thickness and composition profiles of etched silicon patterns from angle resolved x-ray photoelectron spectroscopy analysis
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4729775
Reference28 articles.
1. Towards a controlled patterning of 10 nm silicon gates in high density plasmas
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5. Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas
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2. Characteristics of etching residues on the upper sidewall after anisotropic plasma etching of silicon;Applied Surface Science;2020-07
3. Angle resolved XPS for selective characterization of internal and external surface of porous silicon;Applied Surface Science;2017-06
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