Radiation‐induced charge trapping in implanted buried oxides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346902
Reference7 articles.
1. Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-Insulator
2. Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures
3. Capacitance-voltage characteristics of Semiconductor-Insulator-Semiconductor (SIS) structure
4. Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation
5. Total dose radiation effects for implanted buried oxides
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1. Influence of a postoxidation cooling on the interface state density of MOS structures;Solid-State Electronics;1995-03
2. Monitoring Transistor Degradation;Electrical Characterization of Silicon-on-Insulator Materials and Devices;1995
3. Radiation-hardened metal-oxide-semiconductor structure;Philosophical Magazine Letters;1994-04
4. Characterization and depth profiling ofE’ defects in buried SiO2;Journal of Applied Physics;1993-07
5. Observation of a delocalizedE’ center in buried SiO2;Applied Physics Letters;1993-05-10
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