Controlling magnetic domain wall motion in the creep regime in He+-irradiated CoFeB/MgO films with perpendicular anisotropy-Reference-Cited by-同舟云学术

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Controlling magnetic domain wall motion in the creep regime in He+-irradiated CoFeB/MgO films with perpendicular anisotropy

Published:2015-07-20 Issue:3 Volume:107 Page:032401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Herrera Diez L.¹,García-Sánchez F.¹,Adam J.-P.¹,Devolder T.¹,Eimer S.¹,El Hadri M. S.¹,Lamperti A.²^ORCID,Mantovan R.²,Ocker B.³,Ravelosona D.¹

Affiliation:

1. Institut d'Electronique Fondamentale, Université Paris-Sud, UMR CNRS 8622, 91405 Orsay, France

2. Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate (MB), Italy

3. Singulus Technology AG, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany

Funder

Labex Nanosaclay

RÃ©seaux thÃ©matiques de Recherche AvancÃ©e

Seventh Framework Programme (European Union Seventh Framework Programme)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4927204

Reference17 articles.

1. Device implications of spin-transfer torques

2. Magnetic Domain-Wall Racetrack Memory

3. Toward a Universal Memory

4. Planar Patterned Magnetic Media Obtained by Ion Irradiation

5. Tailoring magnetism by light-ion irradiation

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