Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors-Reference-Cited by-同舟云学术

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Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors

Published:2010-03-15 Issue:11 Volume:96 Page:113506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Sangwon,Park Jun-Hyun,Jeon Kichan,Kim Sungchul,Jeon Yongwoo,Kim Dae Hwan,Kim Dong Myong,Park Jae Chul,Kim Chang Jung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3364134

Reference11 articles.

1. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

2. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

3. Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

4. Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

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1. On a Mott formalism for modeling oxide thin-film transistors;Applied Physics Letters;2024-07-15

2. Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory;IEEE Journal of the Electron Devices Society;2024

3. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors;Coatings;2023-02-13

4. Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2022-02-28

5. High-Performance Oxide TFTs With Co-Sputtered Indium Tin Oxide and Indium-Gallium-Zinc Oxide at Source and Drain Contacts;IEEE Electron Device Letters;2021-02

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