Chemical trends in the activation energies ofDXcenters
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95135
Reference8 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. Symmetry of Donor-Related Centers Responsible for Persistent Photoconductivity inAlxGa1−xAs
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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